絲印：E6D10065A；Package：TO-220-2；E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：634.52 Kbytes 頁數(shù)：9 Pages

WOLFSPEED

E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：553.88 Kbytes 頁數(shù)：9 Pages

WOLFSPEED

10A 650V SIC POWER SCHOTTKY RECTIFIERS

? 175°C TJ operation ? Ultra-low switching loss ? Switching speeds independent of operating temperature ? Low total conduction losses ? High forward surge current capability ? High package isolation voltage ? Terminals finish: 100 Pure Tin ? Pb ? Free Device ? All SMC parts are traceable t

文件：863.61 Kbytes 頁數(shù)：11 Pages

SMCDIODE

桑德斯微電子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100 Pure Tin Halogen-Free All SMC parts

文件：574.29 Kbytes 頁數(shù)：8 Pages

SMCDIODE

桑德斯微電子