絲印：E3D30065D；Package：TO-247-3；Silicon Carbide Schottky Diode E-Series Automotive

Features ? 650-Volt Schottky Rectifier ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? High-Frequency Operation ? Temperature-Independent Switching Behavior ? Extremely Fast Switching ? Positive Temperature Coefficient on VF Benefits ? Higher System Level Efficiency ? I

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絲印：E3D30065D；Package：TO-247-3；Silicon Carbide Schottky Diode E-Series Automotive

文件：712.98 Kbytes 頁數：6 Pages

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科銳

650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi ? Lowest forward voltage (Vf) drop over temperature in the industry\n? Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n? Robust MPS technology with high surge capability\n? High reverse-voltage blocking capability\n? Direct drop-in replacement for current silicon diodes and o;

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Package：TO-247-3；包裝：管件 類別：分立半導體產品 二極管 - 整流器 - 單 描述：650V AUTOMOTIVE SIC DIODE

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