1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 頁數(shù)：30 Pages

INTEL

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1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 頁數(shù)：30 Pages

INTEL

英特爾

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 頁數(shù)：30 Pages

INTEL

英特爾

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 頁數(shù)：30 Pages

INTEL

英特爾

28F010 1024K (128K X 8) CMOS FLASH MEMORY

文件：895.48 Kbytes 頁數(shù)：33 Pages

INTEL

英特爾

28F010 1024K (128K X 8) CMOS FLASH MEMORY

文件：895.48 Kbytes 頁數(shù)：33 Pages

INTEL

英特爾

28F010 1024K (128K X 8) CMOS FLASH MEMORY

文件：895.48 Kbytes 頁數(shù)：33 Pages

INTEL

英特爾

28F010 1024K (128K X 8) CMOS FLASH MEMORY

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer s ? ±10% VCC Tolerance\n? Maximum Latch-Up Immunity through EPI Processing\n?ETOX? Nonvolatile Flash Technology\n? EPROM-Compatible Process Base\n? High-Volume Manufacturing Experience\n?JEDEC-Standard Pinouts\n? 32-Pin Plastic Dip\n? 32-Lead PLCC\n? 32-Lead TSOP\n?? (See Packaging Spec., Order #2;

Intel

英特爾