| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Features ? BVCEO > 60V ? IC = 3A high Continuous Current ? Low saturation voltage VCE(sat) 文件：146.15 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
60V NPN LOW SATURATION POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features ? BVCEO > 60V ? IC = 3A High Continuous Collector Current ? ICM up to 6A Peak Pulse Current ? 2W Power Dissipation ? Low Saturation Voltage VCE(SAT) 文件：385.62 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
60V NPN LOW SATURATION POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features ? BVCEO > 60V ? IC = 3A High Continuous Collector Current ? ICM up to 6A Peak Pulse Current ? 2W Power Dissipation ? Low Saturation Voltage VCE(SAT) 文件：385.62 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
45V NPN HIGH GAIN TRANSISTOR PowerDI?5 Features ? BVCEO > 45V ? IC = 3A High Continuous Collector Current ? ICM = 6A Peak Collector Current ? High gain device >400 @1A ? RCE(sat) = 77m? for low equivalent On-Resistance ? hFE specified up to 6A for a high gain hold up ? 43 smaller than SOT223; 60 smaller than TO252 ? Maximum hei 文件：146.3 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
45V NPN HIGH GAIN TRANSISTOR PowerDI?5 Features ? BVCEO > 45V ? IC = 3A High Continuous Collector Current ? ICM = 6A Peak Collector Current ? High gain device >400 @1A ? RCE(sat) = 77m? for low equivalent On-Resistance ? hFE specified up to 6A for a high gain hold up ? 43 smaller than SOT223; 60 smaller than TO252 ? Maximum hei 文件：146.3 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252 Features BVCEO > 180V IC = 0.5A high Continuous Collector Current ICM = 1A Peak Pulse Current High gain device > 500 at IC =100mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 文件：455.85 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/dxt696b/marking.html">DXT696B；Package：TO252；180V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN TO252 Features BVCEO > 180V IC = 0.5A high Continuous Collector Current ICM = 1A Peak Pulse Current High gain device > 500 at IC =100mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 文件：455.85 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features ? Epitaxial Planar Die Construction ? Complementary NPN Type Available (DXT651) ? Ideally Suited for Automated Assembly Processes ? Ideal for Medium Power Switching or Amplification Applications ? Lead Free By Design/RoHS Compliant (Note 1) ? Green Device (Note 2) 文件：170.82 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features ? Epitaxial Planar Die Construction ? Complementary NPN Type Available (DXT651) ? Ideally Suited for Automated Assembly Processes ? Ideal for Medium Power Switching or Amplification Applications ? Lead Free By Design/RoHS Compliant (Note 1) ? Green Device (Note 2) 文件：170.82 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
60V PNP LOW SATURATION POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features ? BVCEO > -60V ? IC = -3A High Continuous Collector Current ? ICM up to -6A Peak Pulse Current ? 2W Power Dissipation ? Complementary PNP Type: DXT651Q ? T 文件：470.68 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES |
技術(shù)參數(shù)
- Compliance (Only Automotive supports PPAP)：
No
- Product Type：
NPN
- IC (A)：
1.3 A
- ICM (A)：
3 A
- PD (W)：
3 W
- hFE (min)：
20 Min
- hFE(@ IC)：
0.02 A
- hFE(Min 2)：
16
- hFE(@ IC2)：
0.5 A
- VCE (SAT)Max (mV)：
300 mV
- VCE (SAT) (@ IC/IB) (A/m A)：
0.10/2
- VCE (SAT) (@ IC/IB2) (A/mA)：
1/250
- fT (MHz)：
4
- VCE (SAT)(Max.2)：
400 mV
- RCE(SAT)：
N/A mΩ
- Packages：
SOT223
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DIODES |
11+ |
5000 |
原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨 |
詢價 | |||
DIODES |
2015+ |
PowerDI5 |
26898 |
一級代理原裝現(xiàn)貨 |
詢價 | ||
Diodes |
24+ |
SOT-89 |
7500 |
詢價 | |||
DIODES |
25+ |
POWerDI |
500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ZETEX |
2016+ |
SMD1812 |
5000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
D |
24+ |
SOT-89 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
DiodesZetex |
24+ |
NA |
3454 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
DIODES |
23+ |
TO-126 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SMD1812 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
DIOEDS |
25+23+ |
SOT-89 |
16366 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 |
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