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          首頁(yè) >DSH>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          DSHX33010TA

          CAPACITORS LOW IMPEDANCE AND LOW ESR DSHX

          文件:167.83 Kbytes 頁(yè)數(shù):3 Pages

          DUBILIER

          DSHX33010TA

          CAPACITORS LOW IMPEDANCE AND LOW ESR DSHX

          文件:265.87 Kbytes 頁(yè)數(shù):3 Pages

          DUBILIER

          DSHX33010-TA

          CAPACITORS LOW IMPEDANCE AND LOW ESR DSHX

          文件:167.83 Kbytes 頁(yè)數(shù):3 Pages

          DUBILIER

          DSHX33010TA_11

          CAPACITORS LOW IMPEDANCE AND LOW ESR DSHX

          文件:265.87 Kbytes 頁(yè)數(shù):3 Pages

          DUBILIER

          DSH

          SMD功率電感

          DDY

          德立

          DDY

          NDSH10120C-F155

          絲?。?a target="_blank" title="Marking" href="/dsh10120c/marking.html">DSH10120C;Package:TO-247-2LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L

          Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

          文件:292.94 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          NDSH20120CDN

          絲印:DSH20120CDN;Package:TO-247-3LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

          Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

          文件:290.5 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          NDSH20120C-F155

          絲?。?a target="_blank" title="Marking" href="/dsh20120c/marking.html">DSH20120C;Package:TO-247-2LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

          Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

          文件:292.29 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          NDSH30120CDN

          絲?。?a target="_blank" title="Marking" href="/dsh30120cdn/marking.html">DSH30120CDN;Package:TO-247-3LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

          Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

          文件:302.2 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          NDSH30120C-F155

          絲?。?a target="_blank" title="Marking" href="/dsh30120c/marking.html">DSH30120C;Package:TO-247-2LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

          Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

          文件:321.94 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • 直流電阻(DCR):

            100mΩ

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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          17+
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          24+
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          5000
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          更多DSH供應(yīng)商 更新時(shí)間2026-1-18 8:01:00
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