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          首頁(yè) >DSEP>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          DSEP8-06A

          HiPerFRED Epitaxial Diode with soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

          文件:35.58 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          DSEP8-06B

          HiPerFRED Epitaxial Diode with soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

          文件:24.37 Kbytes 頁(yè)數(shù):1 Pages

          IXYS

          艾賽斯

          DSEP8-12A

          HiPerFREDTM Epitaxial Diode with soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

          文件:36.67 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          DSEP8-12A

          10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

          GENERAL DESCRIPTION DSEP8-12A using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. PRODUCT FEATURE ? Ultrafast Recovery Time ? Soft Recovery Characteristics ? Low Recovery Loss ? Low Forward Voltage ? High Surge Current Capability ?

          文件:658.64 Kbytes 頁(yè)數(shù):3 Pages

          THINKISEMI

          思祁半導(dǎo)體

          DSEP9-06CR

          HiPerDynFRED Epitaxial Diode with soft recovery

          Features ? Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ? Low cathode to tab capacitance (

          文件:44.76 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          DSEP29-06A

          ThinkiSemi 30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode

          文件:2.39012 Mbytes 頁(yè)數(shù):5 Pages

          THINKISEMI

          思祁半導(dǎo)體

          DSEP29-06AS

          ThinkiSemi 30Ampere,600Volt Surface Mount Ultrafast Recovery Epitaxial Diode

          文件:2.62153 Mbytes 頁(yè)數(shù):5 Pages

          THINKISEMI

          思祁半導(dǎo)體

          DSEP29-06B

          ThinkiSemi 30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode

          文件:2.362 Mbytes 頁(yè)數(shù):5 Pages

          THINKISEMI

          思祁半導(dǎo)體

          DSEP29-06B

          Fast Recovery Rectifier

          文件:306.61 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          DSEP30-06A

          Ultra fast Rectifier

          文件:388.59 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          技術(shù)參數(shù)

          • Average Continuous Current Rating:

            12

          • Case temperature:

            135

          • Maximum Surge Current [Diode] (A):

            90

          • maximum virtual junction temperature:

            175

          • Thermal resistance [junction-case] (K/W):

            1.6

          • Thermal Resistance caseheatsink KW:

            0.5

          • trr typ ns:

            40

          • IRM:

            6

          • Maximum rate of rise in current over time.:

            200

          • Sample Request:

            Yes

          • Package Type:

            TO-220AC

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          更多DSEP供應(yīng)商 更新時(shí)間2026-1-20 9:01:00
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