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          首頁(yè) >DSEC1>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          DSEC1

          HC-49/US Surface Mounted Crystal

          文件:85.83 Kbytes 頁(yè)數(shù):1 Pages

          MMD

          DSEC120-12AK

          High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

          Features ? International standard package ? Planar passivated chips ? Very short recovery time ? Extremely low switching losses ? Low IRM-values ? Soft recovery behaviour ? Epoxy meets UL 94V-0 Applications ? Antiparallel diode for high frequency switching devices ? Antisaturation diode

          文件:353.49 Kbytes 頁(yè)數(shù):5 Pages

          IXYS

          艾賽斯

          DSEC120-12AK

          Ultrafast Recovery Diode

          FEATURES ·Super fast switch for high efficiency ·Low reverse leakage ·High forward surge current capability ·Rohs Compliant APPLICATIONS ·SMPS,Power Switching Circuits ·Output Rectifiers ·Freewheeling Diodes

          文件:312.21 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          DSEC16-02A

          HiPerFRED Epitaxial Diode with common cathode and soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation di

          文件:21.2 Kbytes 頁(yè)數(shù):1 Pages

          IXYS

          艾賽斯

          DSEC16-04AS

          HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

          IFAV = 2x 10 A VRRM= 400 V trr = 30 ns Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency

          文件:16.85 Kbytes 頁(yè)數(shù):1 Pages

          IXYS

          艾賽斯

          DSEC16-06A

          HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

          文件:37.99 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          DSEC16-06AC

          HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM

          HiPerDynFRED? Epitaxial Diode ISOPLUS220? Electrically Isolated Back Surface Features ? Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ? Low cathode to tab capacitance (

          文件:514.09 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          DSEC16-06BC

          HiPerDynFRED Epitaxial Diode ISOPLUS220

          Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low cathode to tab capacitance (

          文件:539.93 Kbytes 頁(yè)數(shù):3 Pages

          IXYS

          艾賽斯

          DSEC16-12

          HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

          文件:38.77 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          DSEC16-12A

          HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

          Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

          文件:38.77 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          技術(shù)參數(shù)

          • Average Continuous Current Rating:

            60

          • Case temperature:

            115

          • Maximum Surge Current [Diode] (A):

            500

          • maximum virtual junction temperature:

            175

          • Thermal resistance [junction-case] (K/W):

            0.45

          • Thermal Resistance caseheatsink KW:

            0.15

          • trr typ ns:

            80

          • IRM:

            13

          • Maximum rate of rise in current over time.:

            200

          • Sample Request:

            Yes

          • Package Type:

            TO-264

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          更多DSEC1供應(yīng)商 更新時(shí)間2026-1-19 17:28:00
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