20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire? EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 頁(yè)數(shù)：28 Pages

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20Kb 1-Wire EEPROM

文件：457.84 Kbytes 頁(yè)數(shù)：27 Pages

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美信

20Kb 1-Wire EEPROM

文件：269.19 Kbytes 頁(yè)數(shù)：24 Pages

DALLAS

20Kb 1-Wire EEPROM

文件：411.05 Kbytes 頁(yè)數(shù)：27 Pages

MAXIM

美信

20Kb 1-Wire EEPROM

DS28EC20是一款20480位、1-Wire? EEPROM，分為80個(gè)256位的存儲(chǔ)器頁(yè)。器件提供一個(gè)額外的頁(yè)用于控制功能。數(shù)據(jù)被寫(xiě)入一個(gè)32字節(jié)暫存器，經(jīng)過(guò)校驗(yàn)后，復(fù)制到EEPROM存儲(chǔ)器。器件具有一個(gè)特殊功能，可以將8個(gè)存儲(chǔ)器頁(yè)設(shè)置為寫(xiě)保護(hù)或EPROM仿真模式，在EPROM仿真模式下各個(gè)位僅能由1修改為0狀態(tài)。DS28EC20通過(guò)單個(gè)觸點(diǎn)的1-Wire總線進(jìn)行通信，遵循標(biāo)準(zhǔn)1-Wire協(xié)議。各個(gè)器件均具有不可修改的、64位唯一ROM注冊(cè)碼，由工廠光刻入芯片。該注冊(cè)碼可用于在多節(jié)點(diǎn)1-Wire網(wǎng)絡(luò)環(huán)境中尋址器件。\n\n ? 20480位非易失性(NV) EEPROM被分為80個(gè)256位頁(yè)\n? 獨(dú)立的一塊8頁(yè)存儲(chǔ)器(塊)可以設(shè)置為永久的寫(xiě)保護(hù)或OTP EPROM仿真模式(“寫(xiě)為0”)\n? 讀寫(xiě)訪問(wèn)高度向后兼容以前的器件(例如，DS2433)\n? 256位暫存器，遵循嚴(yán)格的讀/寫(xiě)協(xié)議，確保數(shù)據(jù)傳輸?shù)耐暾診n? +25°C溫度下200k擦寫(xiě)次數(shù)\n? 工廠編程的64位唯一注冊(cè)碼，確保無(wú)錯(cuò)的器件選擇和絕對(duì)的器件識(shí)別\n? 開(kāi)關(guān)滯回和濾波優(yōu)化噪聲性能\n? 使用1-Wire協(xié)議以15.4kbps或125kbps速率與主機(jī)進(jìn)行通信\n? 低成本TO-92封裝\n? 工作范圍：5V ±5%，-40°C至+8;

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亞德諾

20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire? EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 頁(yè)數(shù)：28 Pages

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亞德諾

20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire? EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 頁(yè)數(shù)：28 Pages

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亞德諾

20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire? EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 頁(yè)數(shù)：28 Pages

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亞德諾

20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire? EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 頁(yè)數(shù)：28 Pages

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亞德諾

20Kb 1-Wire EEPROM

GENERAL DESCRIPTION The DS28EC20 is a 20480-bit, 1-Wire? EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, blocks of eight memo

文件：683.25 Kbytes 頁(yè)數(shù)：28 Pages

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