2k x 8 3V/5V Operation Static RAM

DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE

文件：254.16 Kbytes 頁(yè)數(shù)：9 Pages

DALLAS

2k x 8 3V/5V Operation Static RAM

文件：168.29 Kbytes 頁(yè)數(shù)：8 Pages

MAXIM

美信

2k x 8、工作于3V/5V的靜態(tài)RAM

DS2016 2k x 8 3V/5V供電靜態(tài)RAM是16,384位、低功耗、全靜態(tài)隨機(jī)訪問(wèn)存儲(chǔ)器，采用CMOS技術(shù)以8位為單位分為2048個(gè)字。該器件工作在單電源下，具有2.7V至5.5V的輸入電壓。芯片使能輸入(/CE)用于選擇器件，可啟動(dòng)最低待機(jī)電流模式，滿足電池供電和電池備份應(yīng)用的需求。當(dāng)采用5V電源供電時(shí)，該器件提供100ns快速訪問(wèn)時(shí)間，而采用3V輸入時(shí)，則具有250ns的性能相對(duì)優(yōu)異的訪問(wèn)時(shí)間。當(dāng)輸入電壓介于2.7V至5.5V時(shí)，器件保持TTL電平輸入和輸出。DS2016是一款JEDEC標(biāo)準(zhǔn)2k x 8 SRAM，與相似容量的ROM和EPROM引腳兼容。 \n? 低功耗CMOS設(shè)計(jì) \n? 待機(jī)電流 \n? tA = 25°C，VCC = 3.0V時(shí)，最大50nA \n? tA = 25°C，VCC = 5.5V時(shí)，最大100nA \n? tA = +60°C，VCC = 5.5V時(shí)，最大1μA \n? 電源工作范圍VCC = 5.5V至2.7V \n? 數(shù)據(jù)保持電壓為：5.5V至2.0V \n? 快速的5V訪問(wèn)時(shí)間 \n? DS2016-100 100ns \n? 降速的3V訪問(wèn)時(shí)間 \n? DS2016-100 250ns \n? -40°C至+85°C工作溫度范圍 \n? 全靜態(tài)工作 \n? 5.5V至2.7V電壓范圍的輸入和輸出,與TT;

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亞德諾

2k x 8 3V/5V Operation Static RAM

DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE

文件：254.16 Kbytes 頁(yè)數(shù)：9 Pages

DALLAS

2k x 8 3V/5V Operation Static RAM

DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE

文件：254.16 Kbytes 頁(yè)數(shù)：9 Pages

DALLAS

Package：24-DIP（0.600"，15.24mm）；包裝：托盤 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 16KBIT PARALLEL 24DIP

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亞德諾

Package：24-DIP（0.600"，15.24mm）；包裝：管件 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 16KBIT PARALLEL 24DIP

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亞德諾

Package：24-SOIC（0.295"，7.50mm 寬）；包裝：管件 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 16KBIT PARALLEL 24SOIC

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亞德諾