4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 頁數(shù)：12 Pages

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4096k Nonvolatile SRAM with Battery Monitor

文件：225.14 Kbytes 頁數(shù)：10 Pages

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4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 頁數(shù)：12 Pages

DALLAS

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 頁數(shù)：12 Pages

DALLAS

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 頁數(shù)：12 Pages

DALLAS

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit

文件：228.66 Kbytes 頁數(shù)：12 Pages

DALLAS

4096k Nonvolatile SRAM with Battery Monitor

文件：225.14 Kbytes 頁數(shù)：10 Pages

MAXIM

美信

4096k Nonvolatile SRAM with Battery Monitor

文件：225.14 Kbytes 頁數(shù)：10 Pages

MAXIM

美信

4096k非易失SRAM，帶有電池監(jiān)測器

DS1350 4096k非易失(NV) SRAM為4,194,304位、全靜態(tài)NV SRAM，按照8位、524,288字排列。每個(gè)NV SRAM均自帶鋰電池及控制電路，控制電路連續(xù)監(jiān)視VCC是否超出容差范圍，一旦超出容差范圍，鋰電池便自動(dòng)切換至供電狀態(tài)、寫保護(hù)將無條件使能、防止數(shù)據(jù)被破壞。此外，DS1350器件具有監(jiān)視VCC狀態(tài)和內(nèi)部鋰電池狀態(tài)的專用電路。PowerCap模塊封裝的DS1350器件可以直接表面貼安裝、通常與DS9034PC PowerCap配合構(gòu)成一個(gè)完整的非易失SRAM模塊?？捎脕硖娲?12k x 8 SRAM、EEPROM或閃存器件。 ? 在沒有外部電源的情況下最少可以保存數(shù)據(jù)10年 \n? 掉電期間數(shù)據(jù)被自動(dòng)保護(hù) \n? 當(dāng)VCC電壓跌落時(shí)，電源監(jiān)視器能夠復(fù)位處理器、并在VCC上升期間持續(xù)保持處理器的復(fù)位狀態(tài) \n? 電池監(jiān)視器核查剩余電量 \n? 70ns的讀寫存取時(shí)間 \n? 沒有寫次數(shù)限制 \n? 典型待機(jī)電流50μA \n? 可升級(jí)512k x 8 SRAM、EEPROM或閃存 \n? 第一次上電前，鋰電池與電路斷開、維持保鮮狀態(tài) \n? ±10% VCC工作范圍(DS1350Y)或±5% VCC工作范圍(DS1350AB) \n? 可選的-40°C至+85°C工業(yè)級(jí)溫度范圍，指定為IND \n? ;

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Package：34-PowerCap? 模塊；包裝：管件 類別：集成電路（IC） 存儲(chǔ)器 描述：IC NVSRAM 4MBIT PAR 34PWRCAP

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