| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DS1249AB | 2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件:153.85 Kbytes 頁數(shù):8 Pages | DALLAS | DALLAS | |
DS1249AB | 2048k Nonvolatile SRAM 文件:214.6 Kbytes 頁數(shù):9 Pages | MAXIM 美信 | MAXIM | |
2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件:153.85 Kbytes 頁數(shù):8 Pages | DALLAS | DALLAS | ||
2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件:153.85 Kbytes 頁數(shù):8 Pages | DALLAS | DALLAS | ||
2048k Nonvolatile SRAM DESCRIPTION The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit 文件:153.85 Kbytes 頁數(shù):8 Pages | DALLAS | DALLAS | ||
2048k Nonvolatile SRAM 文件:214.6 Kbytes 頁數(shù):9 Pages | MAXIM 美信 | MAXIM | ||
2048k Nonvolatile SRAM 文件:214.6 Kbytes 頁數(shù):9 Pages | MAXIM 美信 | MAXIM | ||
DS1249AB | 2048k非易失SRAM DS1249 2048k非易失(NV) SRAM為2,097,152位、全靜態(tài)非易失SRAM,按照8位、262,144字排列。每個NV SRAM均自帶鋰電池及控制電路,控制電路連續(xù)監(jiān)視VCC是否超出容差范圍,一旦超出容差范圍,鋰電池便自動切換至供電狀態(tài)、寫保護將無條件使能、防止數(shù)據(jù)被破壞。該器件沒有寫次數(shù)限制,可直接與微處理器接口、不需要額外的支持電路。 ? 在沒有外部電源的情況下最少可以保存數(shù)據(jù)10年\n? 掉電期間數(shù)據(jù)被自動保護\n? 沒有寫次數(shù)限制\n? 低功耗CMOS操作 \n? 70ns的讀寫存取時間 \n? 第一次上電前,鋰電池與電路斷開、維持保鮮狀態(tài)\n? ±10% VCC工作范圍(DS1249Y) \n? 可選擇±5% VCC工作范圍(DS1249AB)\n? 可選的-40°C至+85°C工業(yè)級溫度范圍,指定為IND\n? JEDEC標準的32引腳DIP封裝; | ADI 亞德諾 | ADI | |
Package:32-DIP 模塊(0.600",15.24mm);包裝:管件 類別:集成電路(IC) 存儲器 描述:IC NVSRAM 2MBIT PARALLEL 32EDIP | AD 亞德諾 | AD | ||
Package:32-DIP 模塊(0.600",15.24mm);包裝:托盤 類別:集成電路(IC) 存儲器 描述:IC NVSRAM 2MBIT PARALLEL 32EDIP | AD 亞德諾 | AD |
技術(shù)參數(shù)
- Memory Type:
NV SRAM
- Memory Size:
256K x 8
- Bus Type:
Parallel
- Features:
DIP with Internal Battery
- VSUPPLY (min)(V):
4.75
- VSUPPLY (max)(V):
5.25
- RoHS Available:
See Data Sheet
- Oper. Temp.(°C):
-40 to +85
- Package/ Pins:
MOD/32
- Budgetary Price (See Notes):
$35.40 @1k
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ADI |
25+ |
Encapsulated Dual-In-Line Modu |
5500 |
2048k非易失SRAM |
詢價 | ||
DALLAS |
05+ |
DIP |
9 |
自己公司全新庫存絕對有貨 |
詢價 | ||
25+ |
DIP-16P |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | |||
DALLAS |
24+ |
DIP |
875 |
詢價 | |||
DALLAS |
24+ |
DIP |
9 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MAXIM |
13+ |
MOD |
3758 |
原裝分銷 |
詢價 | ||
DALLAS |
24+ |
DIP |
5645 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
DALLAS |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
MAXIM |
24+ |
DIP |
25000 |
一級專營品牌全新原裝熱賣 |
詢價 | ||
MAXIM |
23+ |
MOD |
8888 |
專做原裝正品,假一罰百! |
詢價 |
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