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首頁(yè) >DS120>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
SDS120J002C3	文件：1.12079 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120002c3/marking.html">DS120002C3；Package：TO-220-2L；3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.12079 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J002D3	文件：1.07903 Mbytes Page：9 Pages	絲印：DS120002D3；Package：TO-252-2L；3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.07903 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J003D3	文件：1.17677 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120003d3/marking.html">DS120003D3；Package：TO-252-2L；3rd Generation 1200V/3A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.17677 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J005C3	文件：1.18145 Mbytes Page：9 Pages	絲印：DS120005C3；Package：TO-220-2L；3 rd Generation 1200V 5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.18145 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J005D3	文件：1.1397 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120005d3/marking.html">DS120005D3；Package：TO-252-2L；3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.1397 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010C3	文件：1.23812 Mbytes Page：9 Pages	絲印：DS120010C3；Package：TO-220-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.23812 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010C5	文件：590.04 Kbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120010c5/marking.html">DS120010C5；Package：TO-220-2L；5th Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant 文件：590.04 Kbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010D3	文件：1.19501 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120010d3/marking.html">DS120010D3；Package：TO-252-2L；3rd Generation 1200V/10 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.19501 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010E3	文件：1.21086 Mbytes Page：9 Pages	絲印：DS120010E3；Package：TO-263-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.21086 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010G3	文件：1.19524 Mbytes Page：9 Pages	絲印：DS120010G3；Package：TO-247-3L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.19524 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN

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技術(shù)參數(shù)

VRRS V：
140
VDC V：
200
IF(AV) A：
1
IFSM A：
25
VF * V：
0.9
IR(MA)25℃：
0.1
IR(MA)100℃：
2
RθJL* ℃/W：
80
Tj℃：
100
Tstg℃：
-55℃~﹢125℃

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市福安甌科技有限公司	DS1202	DALLAS	25+	SOP-8	2500	福安甌為您提供真芯庫(kù)存,真誠(chéng)服務(wù)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	DS1202S	DALLAS	24+	SMD	500	現(xiàn)貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	DS1202	DALLAS	10+	DIP-8	7800	全新原裝正品,現(xiàn)貨銷售	詢價(jià)
深圳市福田區(qū)綠盛電子商行	DS1202S	DALLAS	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!	詢價(jià)
深圳市卓越微芯電子有限公司	DS1202N	DALLAS	25+	DIP-8	1714	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	DS1204U-C17	DALLAS	25+	DIP-5	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	DS1200S	DALLAS		0805	650	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1202S-TRL	DALLAS	05+	原廠原裝	26187	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	DS1202S	DALLAS	24+	SOP	3500	原裝現(xiàn)貨,可開(kāi)13%稅票	詢價(jià)
深圳市凌旭科技有限公司	DS1200S	MAXIM	2016+	SOP16	3000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)

更多DS120供應(yīng)商更新時(shí)間2026-1-22 11:02:00

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