絲?。?a target="_blank" title="Marking" href="/ds120030g3/marking.html">DS120030G3；Package：TO-247-3L；3rd Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.19612 Mbytes 頁數(shù)：9 Pages

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三安光電

絲?。?a target="_blank" title="Marking" href="/ds120030h3/marking.html">DS120030H3；Package：TO-247-2L；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.13833 Mbytes 頁數(shù)：9 Pages

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三安光電

絲?。?a target="_blank" title="Marking" href="/ds120040g3/marking.html">DS120040G3；Package：TO-247-3L；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.19742 Mbytes 頁數(shù)：9 Pages

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三安光電

絲印：DS120040H3；Package：TO-247-2L；3rd Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.23794 Mbytes 頁數(shù)：9 Pages

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三安光電

絲?。?a target="_blank" title="Marking" href="/ds120040h5/marking.html">DS120040H5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：599.39 Kbytes 頁數(shù)：9 Pages

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三安光電

絲?。?a target="_blank" title="Marking" href="/ds120040j5/marking.html">DS120040J5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件：591.48 Kbytes 頁數(shù)：9 Pages

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三安光電

絲?。?a target="_blank" title="Marking" href="/ds120050h3/marking.html">DS120050H3；Package：TO-247-2L；3rd Generation 1200V/50A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.22875 Mbytes 頁數(shù)：9 Pages

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絲?。?a target="_blank" title="Marking" href="/ds120060g3/marking.html">DS120060G3；Package：TO-247-3L；3rd Generation 1200V/60A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件：1.15153 Mbytes 頁數(shù)：9 Pages

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三安光電

串行RAM芯片

DS1200串行RAM芯片是一個(gè)微型讀/寫存儲(chǔ)器，能夠隨機(jī)存取單個(gè)8位數(shù)據(jù)串(字節(jié))或連續(xù)存取1024位數(shù)據(jù)塊(突發(fā)模式)。片內(nèi)電路降低了與微處理器的接口成本，僅需CLK、/RST及DQ三個(gè)信號(hào)便可實(shí)現(xiàn)數(shù)據(jù)傳輸。\n 在電池輸入端VBAT接入一個(gè)2V至4V的電池便可獲得非易失性。對于要求一定數(shù)據(jù)保持時(shí)間的應(yīng)用可以按照0.5μA負(fù)載確定外部電池的容量。如果不要求非易失性，VBAT引腳應(yīng)接地。 \n? 1024位讀/寫存儲(chǔ)器 \n? 對于備用電池應(yīng)用提供極低的數(shù)據(jù)保持電流 \n? 每秒四百萬比特的數(shù)據(jù)率 \n? 具有單字節(jié)或多字節(jié)數(shù)據(jù)傳輸能力 \n? 沒有寫次數(shù)限制 \n? 低功耗CMOS電路;

ADI

亞德諾

1200 Watt Front End AC-DC Power Supplies

The DS1200 series is Artesyn Embedded Technologies' highest power, highest density bulk front end AC-DC power supply in the industry standard 1U x 2U form factor. It accepts a wide range 90–264 Vac input and provides a main 12 V output plus a 3.3 V or optional 5.5 V standby output. Rated at 1,100 wa ·Active Power Factor Correction\n·EN61000-3-2 harmonic compliance\n·Active AC Inrush Control\n·Standard 1U x 2U form factor\n·High Density 21.71 Watts/cu-in\n·+12 Vdc Output\n·+3.3 or 5.0 Vdc stand-by\n·No Minimum load required\n·Hot-plug operation\n·N+1 Redundant\n·Internal OR'ing FET's\n·Active cu;

Artesyn

雅特生