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          首頁 >DS12>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          DS1230AB-100IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-100-IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-120

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-120IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-120-IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-150

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-150IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-150-IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-200

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          DS1230AB-200IND

          256k Nonvolatile SRAM

          DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

          文件:213.86 Kbytes 頁數(shù):12 Pages

          DALLAS

          詳細(xì)參數(shù)

          • 型號:

            DS12

          • 制造商:

            MAXIM

          • 制造商全稱:

            Maxim Integrated Products

          • 功能描述:

            SmartWatch RAM(DS1216B/C/D/H); SmartWatch ROM(DS1216E/F)

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          DALLAS
          24+
          PDIP
          1358
          全部原裝現(xiàn)貨優(yōu)勢產(chǎn)品
          詢價(jià)
          DALLAS
          2025+
          5000
          原裝進(jìn)口價(jià)格優(yōu) 請找坤融電子!
          詢價(jià)
          DALLAS
          25+
          DIP16
          5117
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價(jià)
          DALLAS
          23+
          DIP-16
          7000
          絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
          詢價(jià)
          DALLAS
          05+
          DIP-16
          12
          自己公司全新庫存絕對有貨
          詢價(jià)
          DALLAS
          25+
          DIP
          128
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          DALLAS
          24+
          DIP
          538
          詢價(jià)
          DALLAS
          25+
          DIP-18
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          DALLAS
          1215+
          DIP28
          150000
          全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
          詢價(jià)
          DALLAS原裝菲
          24+
          DIP
          3500
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          更多DS12供應(yīng)商 更新時(shí)間2026-1-20 10:07:00
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