DRV8334 Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring

1 Features ? Three phase half-bridge gate driver – Drives six N-channel MOSFETs (NMOS) – 4.5 to 60V wide operating voltage range – Bootstrap architecture for high-side gate driver – Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at

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TI

德州儀器

具有精確電流檢測功能的汽車級 12V 和 24V 電池三相柵極驅(qū)動器單元

The DRV8334-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334-Q1 generates the correct gate drive voltages using an in AEC-Q100 qualified for automotive applications. Temperature options: \n \nDRV8334EPHP: –40°C to +150°C, TA\n \nDRV8334QPHP: –40°C to +125°C,TA\n \n\n \nThree phase half-bridge gate driver \n \nDrives six N-channel MOSFETs (NMOS)\n \n4.5 to 60V wide operating voltage range\n \nBootstrap architecture ;

TI

德州儀器