絲印：3404；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

文件：969.7 Kbytes 頁數(shù)：3 Pages

DOINGTER

杜因特

Low Pass Filters

文件：23.47 Kbytes 頁數(shù)：1 Pages

RHOMBUS-IND

N-Channel Enhancement MOSFET

Features ? VDS=30V, ID=5.8A ? RDS(ON) =18mΩ@VGS=10V(Typ.) ? RDS(ON) =27mΩ@VGS=4.5V(Typ.) ? High Power and current handing capability ? Lead free product is acquired ? Surface Mount Package Main Applications ? Battery Protection ? Load Switch ? Power Management

文件：1.00952 Mbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

N-Channel Enhancement Mode Power MOSFET

Description TheFNK 3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features VDS = 30V,ID = 5.8A RDS(ON)

文件：686.55 Kbytes 頁數(shù)：7 Pages

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