絲?。?strong>DN3；Package：LFCSP；Single-Channel, 128-/256-Position, I2C/SPI, Nonvolatile Digital Potentiometer

FEATURES ? 10 kΩ and 100 kΩ resistance options ? Resistor tolerance: 8% maximum ? Wiper current: ±6 mA ? Low temperature coefficient: 35 ppm/°C ? Wide bandwidth: 3 MHz ? Fast start-up time

文件：1.65443 Mbytes 頁(yè)數(shù)：30 Pages

AD

亞德諾

絲印：DN30；Package：DFN-3x3-EP；N-Channel Enhancement Mode Power MOSFET

Description The RM130N30D3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =130A RDS(ON)

文件：165.24 Kbytes 頁(yè)數(shù)：6 Pages

RECTRON

麗正國(guó)際

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

文件：66.27 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

文件：66.27 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

General Description The Supertex DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transi

文件：444.16 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

General Description The Supertex DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transi

文件：444.16 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

General Description The Supertex DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transi

文件：444.16 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

General Description The Supertex DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transi

文件：444.16 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

General Description The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with

文件：29.16 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

General Description The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with

文件：29.16 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX