115V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n ?0.6mm Profile – Ideal for Low Profile Applications\n?Low On-Resistance\n?Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n?Halogen and Antimony Free. “Green” Device (Note 3)\n;

Diodes

美臺半導(dǎo)體

115V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. ?0.4mm Profile—Ideal for Low Profile Applications\n?100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application\n?Halogen and Antimony Free. “Green” Device (Note 3);

Diodes

美臺半導(dǎo)體

650V N-Channel Power MOSFET

Features RDS(ON)

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SY

順燁電子

高壓MOSFET

XINNUO

芯諾

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET BVDSS: 101V~250V POWERDI5

DIODES

美臺半導(dǎo)體

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET BVDSS: 101V~250V POWERDI5

DIODES

美臺半導(dǎo)體