60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DIODES

美臺半導(dǎo)體

Printed Circuit Mount - Standard Profile

Printed Circuit Mount - Standard Profile, 24VA, Primary: 115/230V, Secondary Series: 10VCT @ 2.4A, Secondary Parallel: 5V @ 4.8A

PowerVolt

100V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch. ?100% Unclamped Inductive Switch (UIS) Test in Production\n?High Conversion Efficiency\n?Low RDS(ON) – Minimizes On-State Losses\n?Low Input Capacitance\n?Fast Switching Speed;

Diodes

美臺半導(dǎo)體

100V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance?(RDS(ON)) and yet maintain superior switching performance, making it?ideal for high-efficiency power management applications. ?Low RDS(ON) – Ensures On State Losses are Minimized\n?Excellent Qgd x RDS (ON) Product (FOM)\n?Advanced Technology for DC/DC Converters\n?Small Form Factor Thermally Efficient Package Enables Higher?Density End Products\n?Occupies Just 33% of the Board Area Occupied by SO-8 Enabling?Smaller End;

Diodes

美臺半導(dǎo)體

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET BVDSS: 61V~100V TO252 T\u0026R

DIODES

美臺半導(dǎo)體

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET BVDSS: 61V~100V POWERDI50

DIODES

美臺半導(dǎo)體

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET BVDSS: 61V~100V SO-8 T\u0026R

DIODES

美臺半導(dǎo)體