| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DMP | 5mm BOX POLYESTER 文件：281.08 Kbytes 頁數(shù)：2 Pages | DUBILIER | DUBILIER | |
表面貼裝型 P 通道 20 V 6.2A（Ta） 660mW（Ta） U-DFN2020-6（E 類） 類別: 分立半導體產(chǎn)品 | 晶體管 - FET，MOSFET - 單 FET，MOSFET RoHS 狀態(tài)： 符合 ROHS3 規(guī)范 文件：178.022 Kbytes 頁數(shù)：5 Pages | DIODES | |||
12V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance 文件：375.4 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/p1012us/marking.html">P1012US；Package：SO-8；12V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance 文件：375.4 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導體 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE MOSFET Features LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching VGS(TH) = -0.6V Typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Tota 文件：596.01 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/1w/marking.html">1W；Package：U-WLB1010-4；P-CHANNEL ENHANCEMENT MODE MOSFET Features LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching VGS(TH) = -0.6V Typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Tota 文件：596.01 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導體 | DIODES | ||
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features ? Dual P-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage VGS(TH) 文件：153.87 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導體 | DIODES | ||
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features ? Dual P-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage VGS(TH) 文件：153.87 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導體 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Very Low Gate Threshold Voltage VGS(TH) 文件：147.86 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導體 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Very Low Gate Threshold Voltage VGS(TH) 文件：147.86 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導體 | DIODES |
技術(shù)參數(shù)
- Automotive Compliant PPAP：
No
- Polarity：
P
- ESD Diodes：
Yes
- VDS：
12 V
- VGS：
8 ±V
- IDS @ TA = +25°C：
12.8 A
- PD @ TA = +25°C：
2.1 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
8.5 mΩ
- RDS(ON) Max @ VGS (2.5V)：
12 mΩ
- RDS(ON) Max @ VGS (1.8V)：
18.5 mΩ
- VGS (th) Max：
1 V
- QG Typ @ VGS = 4.5V (nC)：
28 nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
U-DFN2020-6 (Type F)
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DISCRETE |
3000 |
DIO |
135000 |
詢價 | |||
DII |
22+ |
30000 |
原裝現(xiàn)貨,假一罰十,可含稅原進項 |
詢價 | |||
DIODES/美臺 |
2022+ |
1600 |
全新原裝 貨期兩周 |
詢價 | |||
最新 |
2000 |
原裝正品現(xiàn)貨 |
詢價 | ||||
DIODES/美臺 |
17+ |
DFN |
3988 |
原裝/現(xiàn)貨 |
詢價 | ||
DIODES/美臺 |
23+ |
NA |
9990 |
只有原裝 |
詢價 | ||
DIODE |
23+ |
SOT-23 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
NS |
23+ |
DIP |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
DUBILIER |
24+/25+ |
560 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
Diodes |
25+ |
54 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 |
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