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          首頁 >DMN100>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          DMN1004UFDF-13

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? 0.6mm Profile – Ideal for Low-Profile Applications ? PCB Footprint of 4mm2

          文件:493.41 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1004UFDF-7

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? 0.6mm Profile – Ideal for Low-Profile Applications ? PCB Footprint of 4mm2

          文件:493.41 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1004UFV

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low RDS(ON) – Ensures On-State Losses are Minimized ? Small Form Factor Thermally Effici

          文件:375.17 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1004UFV-13

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low RDS(ON) – Ensures On-State Losses are Minimized ? Small Form Factor Thermally Effici

          文件:375.17 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1004UFV-7

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low RDS(ON) – Ensures On-State Losses are Minimized ? Small Form Factor Thermally Effici

          文件:375.17 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1006UCA6

          N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features ? CSP with Footprint 2.70mm ×1.81mm ? Height = 0.21mm for Low Profile ?

          文件:482.68 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1006UCA6-7

          N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features ? CSP with Footprint 2.70mm ×1.81mm ? Height = 0.21mm for Low Profile ?

          文件:482.68 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN100-7

          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

          Features ? Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V ? High Drain Current: 1.1A ? Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits ? ESD Protected Gate ? Lead Free By Design/RoHS Compliant (Note 1) ? Green Device (Note 2) ? Qualified to AEC-Q

          文件:63.86 Kbytes 頁數(shù):3 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1008UFDF

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features ? 0.6mm Profile – Ideal for Low Profile Applications ? PCB Footprint of 4mm2 ? Low Gat

          文件:573.61 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          DMN1008UFDF-13

          12V N-CHANNEL ENHANCEMENT MODE MOSFET

          Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features ? 0.6mm Profile – Ideal for Low Profile Applications ? PCB Footprint of 4mm2 ? Low Gat

          文件:573.61 Kbytes 頁數(shù):7 Pages

          DIODES

          美臺半導(dǎo)體

          技術(shù)參數(shù)

          • Automotive Compliant PPAP:

            On Request*

          • Polarity:

            N

          • ESD Diodes:

            Yes

          • VDS:

            30 V

          • VGS:

            20 ±V

          • IDS @ TA = +25°C:

            1.1 A

          • PD @ TA = +25°C:

            0.5 W

          • RDS(ON) Max @ VGS (10V):

            170 mΩ

          • RDS(ON) Max @ VGS (4.5V):

            240 mΩ

          • RDS(ON) Max @ VGS (2.5V):

            N/A mΩ

          • RDS(ON) Max @ VGS (1.8V):

            N/A mΩ

          • VGS (th) Max:

            3 V

          • QG Typ @ VGS = 4.5V (nC):

            N/A nC

          • QG Typ @ VGS = 10V (nC):

            5.5 nC

          • Packages:

            SC59

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          更多DMN100供應(yīng)商 更新時間2026-1-21 18:07:00
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