OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Suitable for broad band applications\n? Simple bias circuits\n? Ultra-low thermal resistance\n? BeO free, Low C(rss)\n? High gain - 15 dB minimum;

TT Electronics

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

文件：197.96 Kbytes 頁數(shù)：20 Pages

TI

德州儀器

DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

1 Features 1? Industry-Leading Low-Power Consumption ? Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 μA (1.8 V) – SEL = High: 2.5 kHz Using 142 μA (1.8 V) ? 1.65- to 5.5-V Operating VCC Range ? High Magnetic Sensitivity: ±2 mT (Typical) ? Robust Hysteresis: 4 mT (Typical) ? Pu

文件：957.54 Kbytes 頁數(shù)：25 Pages

TI

德州儀器

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

文件：197.96 Kbytes 頁數(shù)：20 Pages

TI

德州儀器