絲?。?strong>DGS；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 頁數(shù)：8 Pages

UNSEMI

優(yōu)恩半導體

絲?。?a target="_blank" title="Marking" href="/dgs/marking.html">DGS*；Package：SOT-89；NPN Transistors

文件：685.11 Kbytes 頁數(shù)：4 Pages

YFWDIODE

佑風微

Gallium Arsenide Schottky Rectifier

Features Low forward voltage Very high switching speed – low IRM, trr values Soft reverse recovery Temperature independent switching behaviour High temperature operation capability Applications Switched mode power supplies (SMPS) High frequency converters R

文件：26.56 Kbytes 頁數(shù)：1 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier

Features Low forward voltage Very high switching speed – low IRM, trr values Soft reverse recovery Temperature independent switching behaviour High temperature operation capability Applications Switched mode power supplies (SMPS) High frequency converters R

文件：26.56 Kbytes 頁數(shù)：1 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier

Features ● Low forward voltage ● Very high switching speed ● Low junction capacity of GaAs - low reverse current peak at turn off ● Soft turn off ● Temperature independent switching behaviour ● High temperature operation capability ● Epoxy meets UL 94V-0 Applications ● MHz switched mode p

文件：56.69 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier Second generation

Gallium Arsenide Schottky Rectifier Second generation Features GaAs Schottky Diode with Enhanced Barrier Height: ? lowest operating forward voltage drop due to additional injection of minority carriers ? high switching speed - low junction capacity of GaAs diode independent from temperatu

文件：55.35 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier

Features GaAs Schottky Diode with Enhanced Barrier Height: ? lowest operating forward voltage drop due to additional injection of minority carriers ? high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak d

文件：55.39 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier

Features ● Low forward voltage ● Very high switching speed ● Low junction capacity of GaAs - low reverse current peak at turn off ● Soft turn off ● Temperature independent switching behaviour ● High temperature operation capability ● Epoxy meets UL 94V-0 Applications ● MHz switched mode p

文件：165.45 Kbytes 頁數(shù)：3 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier

Features Low forward voltage Very high switching speed – low IRM, trr values Soft reverse recovery Temperature independent switching behaviour High temperature operation capability Applications Switched mode power supplies (SMPS) High frequency converters R

文件：26.2 Kbytes 頁數(shù)：1 Pages

IXYS

艾賽斯

Gallium Arsenide Schottky Rectifier

Features Low forward voltage Very high switching speed – low IRM, trr values Soft reverse recovery Temperature independent switching behaviour High temperature operation capability Applications Switched mode power supplies (SMPS) High frequency converters R

文件：26.2 Kbytes 頁數(shù)：1 Pages

IXYS

艾賽斯