HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Features Floating High-Side Driver in Bootstrap Operation to 600V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source Logic Input (HIN and LIN) 3.3V Capability Schmitt Triggered Logic Inputs with Internal Pull-Down Undervo

文件：741.83 Kbytes 頁(yè)數(shù)：11 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：DGD2190M；Package：SO-8；HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Features Floating High-Side Driver in Bootstrap Operation to 600V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source Logic Input (HIN and LIN) 3.3V Capability Schmitt Triggered Logic Inputs with Internal Pull-Down Undervo

文件：741.83 Kbytes 頁(yè)數(shù)：11 Pages

DIODES

美臺(tái)半導(dǎo)體

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

The DGD2190M is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2190M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.The DGD2190M logic inputs are Floating High-Side Driver in Bootstrap Operation to 600V\nDrives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation\nOutput Drivers Capable of 4.5A/4.5A Typ Sink/Source\nLogic Input (HIN and LIN) 3.3V Capability\nSchmitt Triggered Logic Inputs with Internal Pull-Down\nUndervoltage Lockout ;

Diodes

美臺(tái)半導(dǎo)體

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRV HALF-BRIDGE 8SO 2.5K

DIODES

美臺(tái)半導(dǎo)體