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          首頁 >DGD2184>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          DGD2184

          HALF BRIDGE GATE DRIVER IN SO-8

          文件:734.33 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD2184

          HALF-BRIDGE GATE DRIVER

          The DGD2184 is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2184’s high-side to switch to 600V in a bootstrap operation.\nThe DGD2184 logic inputs are compatible with standard TTL Floating High-Side Driver in Bootstrap Operation to 600V\nDrives Two N-Channel MOSFETs or IGBTs in Half-Bridge Configuration\n1.4A Source/1.8A Sink Output Current Capability\nOutputs Tolerant to Negative Transients\nInternal Dead Time of 400ns to Protect MOSFETs\nWide Low-Side Gate Driver and Logic ;

          Diodes

          美臺半導(dǎo)體

          DGD21844M

          HALF-BRIDGE GATE DRIVER IN SO-14

          Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga

          文件:872.2 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD21844M_V01

          HALF-BRIDGE GATE DRIVER IN SO-14

          Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga

          文件:872.2 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD21844MS14-13

          絲?。?a target="_blank" title="Marking" href="/dgd21844m/marking.html">DGD21844M;Package:SO-14;HALF-BRIDGE GATE DRIVER IN SO-14

          Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga

          文件:872.2 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD2184M

          600V HALF BRIDGE GATE DRIVER IN SO-8

          Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

          文件:673.63 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD2184M_V01

          600V HALF BRIDGE GATE DRIVER IN SO-8

          Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

          文件:673.63 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD2184MS8-13

          絲?。?a target="_blank" title="Marking" href="/dgd2184m/marking.html">DGD2184M;Package:SO-8;600V HALF BRIDGE GATE DRIVER IN SO-8

          Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S

          文件:673.63 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD21844

          HALF- BRIDGE GATE DRIVER IN SO-14

          文件:777.7 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          DGD21844M

          HALF-BRIDGE GATE DRIVER

          文件:637.37 Kbytes 頁數(shù):12 Pages

          DIODES

          美臺半導(dǎo)體

          技術(shù)參數(shù)

          • Inputs:

            IN

          • OutputCurrentIO+(Typ):

            1900mA

          • OutputCurrentIO-(Typ):

            2300mA

          • InternalDeadtime(Typ):

            400ns

          • tON(Typ):

            680ns

          • tOFF(Typ):

            270ns

          • tR(Typ):

            40ns

          • tF(Typ):

            20ns

          供應(yīng)商型號品牌批號封裝庫存備注價格
          DiodesIncorporated
          19+
          58000
          原裝正品價格優(yōu)勢
          詢價
          Diodes Incorporated
          24+
          14-SO
          65200
          一級代理/放心采購
          詢價
          DIODES/美臺
          23+
          NA
          12730
          原裝正品代理渠道價格優(yōu)勢
          詢價
          DIODES(美臺)
          2447
          SO-14
          315000
          2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
          詢價
          DIODES
          25+
          SOP-14
          2500
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          DIODES(美臺)
          2021+
          SO-14
          499
          詢價
          Diodes(美臺)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持
          詢價
          DIODES/美臺
          23+
          NA.
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          DIODES
          22+
          NA
          12080
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價
          Diodes
          22+
          14SO
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          更多DGD2184供應(yīng)商 更新時間2026-1-19 15:26:00
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