3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features Three Floating High-Side Drivers in Bootstrap Operation to 600V 200mA Source / 350mA Sink Output Current Capability Outputs Tolerant to Negative Transients, dV/dt Immune Logic Input 3.3V Capability Internal Deadtime of 290ns to Protect MOSFETs Matched Prop Delay for All Channels Ou

文件：1.58842 Mbytes 頁數(shù)：14 Pages

DIODES

美臺半導(dǎo)體

絲印：DGD2136；Package：SO-28；3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features Three Floating High-Side Drivers in Bootstrap Operation to 600V 200mA Source / 350mA Sink Output Current Capability Outputs Tolerant to Negative Transients, dV/dt Immune Logic Input 3.3V Capability Internal Deadtime of 290ns to Protect MOSFETs Matched Prop Delay for All Channels Ou

文件：1.58842 Mbytes 頁數(shù)：14 Pages

DIODES

美臺半導(dǎo)體

3-PHASE HALF-BRIDGE GATE DRIVER IN SO28

The DGD2136 is a three-phase gate driver IC designed for high-voltage / high-speed applications, driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2136’s high-side to switch to 600V in a bootstrap operation.The DGD2136 logic inputs a Three floating high-side drivers in bootstrap operation to 600V\n200mA source / 350mA sink output current capability\nOutputs tolerant to negative transients, dV/dt immune\nLogic input 3.3V capability\nInternal deadtime of 290ns to protect MOSFETs\nMatched prop delay for all channels\nOutputs out of;

Diodes

美臺半導(dǎo)體

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features - Three Floating High-Side Drivers in Bootstrap Operation to 600V - 200mA Source / 350mA Sink Output Current Capability - Outputs Tolerant to Negative Transients, dV/dt Immune - Logic Input 3.3V Capability - Internal Deadtime of 290ns to Protect MOSFETs and IGBTs - Matched Prop Dela

文件：806.61 Kbytes 頁數(shù)：12 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/dgd2136m/marking.html">DGD2136M；Package：SO-28；3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features - Three Floating High-Side Drivers in Bootstrap Operation to 600V - 200mA Source / 350mA Sink Output Current Capability - Outputs Tolerant to Negative Transients, dV/dt Immune - Logic Input 3.3V Capability - Internal Deadtime of 290ns to Protect MOSFETs and IGBTs - Matched Prop Dela

文件：806.61 Kbytes 頁數(shù)：12 Pages

DIODES

美臺半導(dǎo)體

3-PHASE HALF-BRIDGE GATE DRIVER IN SO28

The DGD2136M is a three-phase gate driver IC designed for highvoltage?/ high-speed applications, driving N-Channel MOSFETs and?IGBTs in a half-bridge configuration. High-voltage processing?techniques enable the DGD2136M’s high-side to switch to 600V in a?bootstrap operation.The DGD2136M logic inputs ?Three Floating High-Side Drivers in Bootstrap Operation to?600V\n?200mA Source / 350mA Sink Output Current Capability\n?Outputs Tolerant to Negative Transients, dV/dt Immune\n?Logic Input 3.3V Capability\n?Internal Deadtime of 290ns to Protect MOSFETs and IGBTs\n?Matched Prop Delay for All Channels;

Diodes

美臺半導(dǎo)體

Package：28-SOIC（0.295"，7.50mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 28SO

DIODES

美臺半導(dǎo)體

Package：28-SOIC（0.295"，7.50mm 寬）；包裝：卷帶（TR） 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 28SO

DIODES

美臺半導(dǎo)體