絲?。?strong>DGD；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 頁數(shù)：8 Pages

UNSEMI

優(yōu)恩半導體

絲印：DGD0227；Package：SO-8；DUAL 4.0A HIGH SPEED LOW-SIDE GATE DRIVER IN SO-8

Features Efficient Low Cost Solution for Driving MOSFETs and IGBTs Wide Supply Voltage Operating Range: 4.5V to 18V 4.0A Source / 4.0A Sink Output Current Capability Fast Propagation Delay (35ns Typ) Fast Rise and Fall Times (20ns Typ) Logic Input (IN) 3.3V Capability Extended Temperature R

文件：694.99 Kbytes 頁數(shù)：11 Pages

DIODES

美臺半導體

絲印：DGD0504；Package：W-DFN3030-10；100V HALF-BRIDGE GATE DRIVER IN W-DFN3030-10

Features - Floating High-Side Driver in Bootstrap Operation to 100V - Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration - 290mA Source/600mA Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 430ns to Protect MOSFETs - Wide Low

文件：716.85 Kbytes 頁數(shù)：11 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/dgd0506a/marking.html">DGD0506A；Package：W-DFN3030-10；HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME

Features - 50V Floating High-Side Driver - Drives Two N-Channel MOSFETs in a Half-Bridge Configuration - 1.5A Source / 2.0A Sink Output Current Capability - Internal Bootstrap Diode Included - Undervoltage Lockout for High-Side and Low-Side Drivers - Programmable Deadtime to Protect MOSFETs

文件：845.89 Kbytes 頁數(shù)：13 Pages

DIODES

美臺半導體

絲印：DGD0506A；Package：MSOP10；HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME

Features - 50V Floating High-Side Driver - Drives Two N-Channel MOSFETs in a Half-Bridge Configuration - 1.5A Source / 2.0A Sink Output Current Capability - Internal Bootstrap Diode Included - Undervoltage Lockout for High-Side and Low-Side Drivers - Programmable Deadtime to Protect MOSFETs

文件：845.89 Kbytes 頁數(shù)：13 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/dgd0506/marking.html">DGD0506；Package：V-DFN3030-10；HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME

Features 50V Floating High-Side Driver Drives Two N-Channel MOSFETs in a Half-Bridge Configuration 1.25A Source / 2.0A Sink Output Current Capability Internal Bootstrap Schottky Diode Included Undervoltage Lockout for High-Side and Low-Side Drivers Programmable Deadtime to Protect MOSFETs

文件：914.33 Kbytes 頁數(shù)：14 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/dgd0507/marking.html">DGD0507；Package：W-DFN3030-10；HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10

Features 50V Floating High-Side Driver Drives Two N-channel MOSFETs in a Half-Bridge Configuration 1.25A Source / 2.0A Sink Output Current Capability Internal Bootstrap Schottky Diode Included Undervoltage Lockout for High-Side and Low-Side Drivers Delay Matching a Typical of 5ns Propagati

文件：700.58 Kbytes 頁數(shù)：11 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/dgd05463/marking.html">DGD05463；Package：W-DFN3030-10；HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME

Features ? 50V Floating High-Side Driver ? Drives Two N-Channel MOSFETs in a Half-Bridge Configuration ? 1.5A Source / 2.5A Sink Output Current Capability ? Internal Bootstrap Diode Included ? Undervoltage Lockout for High-Side and Low-Side Drivers ? Programmable Deadtime to Protect MOSFETs

文件：914.08 Kbytes 頁數(shù)：14 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/dgd05463/marking.html">DGD05463；Package：MSOP-10；HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME

Features ? 50V Floating High-Side Driver ? Drives Two N-Channel MOSFETs in a Half-Bridge Configuration ? 1.5A Source / 2.5A Sink Output Current Capability ? Internal Bootstrap Diode Included ? Undervoltage Lockout for High-Side and Low-Side Drivers ? Programmable Deadtime to Protect MOSFETs

文件：914.08 Kbytes 頁數(shù)：14 Pages

DIODES

美臺半導體

絲印：DGD05473；Package：V-DFN3030-10；HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN DFN3030-10

Features ? 50V Floating High-Side Driver ? Drives Two N-channel MOSFETs in a Half-Bridge Configuration ? 1.5A Source / 2.5A Sink Output Current Capability ? Internal Bootstrap Diode Included ? Undervoltage Lockout for High-Side and Low-Side Drivers ? Delay Matching Maxmimum of 5ns ? Propag

文件：728.47 Kbytes 頁數(shù)：12 Pages

DIODES

美臺半導體