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          首頁(yè) >DG612>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          DG612DY

          High-Speed, Low-Glitch D/CMOS Analog Switches

          DESCRIPTION The DG611, DG612, DG613 feature high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ? Fast switching - tON: 12 ns ? Low charge injection: ± 2 pC ? Wide bandwidth: 500 MHz ? 5

          文件:91.09 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612DY-E3

          High-Speed, Low-Glitch D/CMOS Analog Switches

          FEATURES ? Fast switching - tON: 12 ns ? Low charge injection: ± 2 pC ? Wide bandwidth: 500 MHz ? 5 V CMOS logic compatible ? Low RDS(on): 18 ? ? Low quiescent power : 1.2 nW ? Single supply operation BENEFITS ? Improved data throughput ? Minimal switching transients ? Improved system

          文件:187.35 Kbytes 頁(yè)數(shù):15 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612DY-T1

          High-Speed, Low-Glitch D/CMOS Analog Switches

          FEATURES ? Fast switching - tON: 12 ns ? Low charge injection: ± 2 pC ? Wide bandwidth: 500 MHz ? 5 V CMOS logic compatible ? Low RDS(on): 18 ? ? Low quiescent power : 1.2 nW ? Single supply operation BENEFITS ? Improved data throughput ? Minimal switching transients ? Improved system

          文件:187.35 Kbytes 頁(yè)數(shù):15 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612DY-T1-E3

          High-Speed, Low-Glitch D/CMOS Analog Switches

          FEATURES ? Fast switching - tON: 12 ns ? Low charge injection: ± 2 pC ? Wide bandwidth: 500 MHz ? 5 V CMOS logic compatible ? Low RDS(on): 18 ? ? Low quiescent power : 1.2 nW ? Single supply operation BENEFITS ? Improved data throughput ? Minimal switching transients ? Improved system

          文件:187.35 Kbytes 頁(yè)數(shù):15 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612E

          1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

          FEATURES ? 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply ? Low charge injection (1.4 pC typ.) ? Leakage current

          文件:441.38 Kbytes 頁(yè)數(shù):18 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612EEN-T1-GE4

          1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

          FEATURES ? 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply ? Low charge injection (1.4 pC typ.) ? Leakage current

          文件:441.38 Kbytes 頁(yè)數(shù):18 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612EEQ-T1-GE4

          1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

          FEATURES ? 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply ? Low charge injection (1.4 pC typ.) ? Leakage current

          文件:441.38 Kbytes 頁(yè)數(shù):18 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612EEY-T1-GE4

          1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

          FEATURES ? 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply ? Low charge injection (1.4 pC typ.) ? Leakage current

          文件:441.38 Kbytes 頁(yè)數(shù):18 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612A

          1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

          文件:240.42 Kbytes 頁(yè)數(shù):15 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          DG612AEN-T1-E4

          1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

          文件:240.42 Kbytes 頁(yè)數(shù):15 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            DG612

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High-Speed, Low-Glitch D/CMOS Analog Switches

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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          SILICONIX
          25+
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          23+
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          更多DG612供應(yīng)商 更新時(shí)間2026-1-20 16:11:00
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