Powered-off Protection, 1 ?? 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

FEATURES ? Low switch on-resistance (1 ?) ? 1.65 V to 5.5 V single supply operation ? Isolation in powered-off mode ? Control logic inputs can go over V+ ? Low charge injection (5 pC) ? Low total harmonic distortion ? Break before make switching ? Latch-up performance exceeds 300 mA per JE

文件：166 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Powered-off Protection, 1 ?? 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

FEATURES ? Low switch on-resistance (1 ?) ? 1.65 V to 5.5 V single supply operation ? Isolation in powered-off mode ? Control logic inputs can go over V+ ? Low charge injection (5 pC) ? Low total harmonic distortion ? Break before make switching ? Latch-up performance exceeds 300 mA per JE

文件：166 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Powered-off Protection, 1 Ω, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

The DG2012E is a high performance single-pole, double-throw (SPDT) analog switch designed for 1.8 V to 5.5 V operation with a single power rail. Fabricated with high density CMOS technology, the device achieves low on resistance of 1 Ω at a 5 V...\nLow switch on-resistance (1 Ω)\n1.65 V to 5.5 V sin;

Vishay

威世

HIGH-SIDE AND LOW-SIDE GATE DRIVER

文件：497.02 Kbytes 頁數(shù)：11 Pages

DIODES

美臺(tái)半導(dǎo)體

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching

文件：202.82 Kbytes 頁數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：249.6 Kbytes 頁數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體