絲?。?strong>D9N；Package：DSBGA；SN74LVC1G29 2-of-3 Decoder/Demultiplexer

1FEATURES 2? Available in the Texas Instruments NanoFree? Package ? Supports 5-V VCC Operation ? Inputs Accept Voltages to 5.5 V ? Supports Down Translation to VCC ? Max tpd of 5.1 ns at 3.3 V ? Low Power Consumption, 10-μA Max I CC ? ±24-mA Output Drive at 3.3 V ? Typical V OLP (Output G

文件：683.94 Kbytes 頁(yè)數(shù)：21 Pages

TI

德州儀器

絲印：D9N；Package：DSBGA；SN74LVC1G29 2-of-3 Decoder/Demultiplexer

1FEATURES 2? Available in the Texas Instruments NanoFree? Package ? Supports 5-V VCC Operation ? Inputs Accept Voltages to 5.5 V ? Supports Down Translation to VCC ? Max tpd of 5.1 ns at 3.3 V ? Low Power Consumption, 10-μA Max I CC ? ±24-mA Output Drive at 3.3 V ? Typical V OLP (Output G

文件：683.94 Kbytes 頁(yè)數(shù)：21 Pages

TI

德州儀器

絲印：D9N10A；Package：TO-252AA；100V N-Channel MOSFET

Features ? RDS(ON), VGS@10V,[email protected]

文件：457.27 Kbytes 頁(yè)數(shù)：8 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/d9n10/marking.html">D9N10；Package：IPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件：278.05 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d9n10/marking.html">D9N10；Package：DPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件：278.05 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d9nm60/marking.html">D9NM60；Package：IPAK；N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh?Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that a

文件：181.51 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d9nm60/marking.html">D9NM60；Package：DPAK；N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh?Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that a

文件：181.51 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體