TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications

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SAVANTIC

NPN Type Plastic Encapsulate Transistors

FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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SECOS

喜可士

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

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UTC

友順

Silicon NPN transistor in a TO-126 Plastic Package

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.

文件：1.01103 Mbytes 頁(yè)數(shù)：6 Pages

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Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.

文件：1.01979 Mbytes 頁(yè)數(shù)：6 Pages

FOSHAN

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BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

文件：126.08 Kbytes 頁(yè)數(shù)：4 Pages

UTC

友順

TO-126 Plastic-Encapsulate Transistors

文件：1.07713 Mbytes 頁(yè)數(shù)：4 Pages

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Silicon NPN transistor in a TO-252 Plastic Package.

文件：671.17 Kbytes 頁(yè)數(shù)：6 Pages

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Silicon NPN transistor in a SOT-89 Plastic Package

文件：905.14 Kbytes 頁(yè)數(shù)：6 Pages

FOSHAN

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