絲印：D5N；Package：DSBGA；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 頁數(shù)：20 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/d5nk50z/marking.html">D5NK50Z；Package：TO-251；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：618.93 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：D5NK50Z；Package：TO-251；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH? series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：447.12 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d5nk50z/marking.html">D5NK50Z；Package：DPAK；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH? Power MOSFETs in I2PAK, DPAK, TO?220, TO?220FP and IPAK packages

Features ? 100 avalanche tested ? Gate charge minimized ? Very low intrinsic capacitance ? Zener-protected Applications ? Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroelect

文件：674.1 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：D5NM60；Package：IPAK；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件：558.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d5nm60/marking.html">D5NM60；Package：DPAK；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件：558.91 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d5ne60c/marking.html">D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.32836 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d5ne60c/marking.html">D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.33094 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲印：D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.32871 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體

絲印：D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.3336 Mbytes 頁數(shù)：13 Pages

WXDH

東海半導(dǎo)體