N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

文件：121.91 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導體

European Power- Semiconductor and Electronics Company

450A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier

文件：101.58 Kbytes 頁數(shù)：5 Pages

EUPEC

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - SMD PACKAGES WITH SMALL DIMENSIONS AND LOW PROFILE - EXCELLENT ATTENUATION BEHAVIOUR

文件：83.86 Kbytes 頁數(shù)：7 Pages

PETERMANN

Dual Operational Amplifier

FEATURES ● No frequency Compensation Required ● No latch-up ● Large common mode and differential voltage range ● Parameter tracking over temperature range ● Gain and phase match between amplifiers ● Internally frequency compensated ● Low noise input transistors

文件：405.1 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Dual Operational Amplifier

FEATURES ● No frequency Compensation Required ● No latch-up ● Large common mode and differential voltage range ● Parameter tracking over temperature range ● Gain and phase match between amplifiers ● Internally frequency compensated ● Low noise input transistors

文件：405.1 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Dual Operational Amplifier

FEATURES ● No frequency Compensation Required ● No latch-up ● Large common mode and differential voltage range ● Parameter tracking over temperature range ● Gain and phase match between amplifiers ● Internally frequency compensated ● Low noise input transistors

文件：405.1 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The μPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipelin

文件：919.98 Kbytes 頁數(shù)：85 Pages

ELPIDA

爾必達

isc Silicon NPN Power Transistors

DESCRIPTION ? Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ? High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ? Designed for high power amplifier and switching applications.

文件：221.5 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS

Complementary Silicon Power Transistor . . . for general purpose driver or medium power output stages in CW or switching applications. ? Low Collector–Emitter Saturation Voltage — 0.5 V (Max) ? High ft for Good Frequency Response ? Low Leakage Current

文件：94.53 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

Silicon PNP Power Transistors

DESCRIPTION ? With TO-220 package ? Complement to type D44C Series ? Very low collector saturation voltage ? Fast switching APPLICATIONS ? Designed for various specific and general purpose application ? Shunt and switching regulators ? Low and high frequency inverters converters and etc.

文件：133.1 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電