High Current Glass Passivated Molding Single-Phase Bridge Rectifier

文件：293.77 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

Bridge Diodes 800V, 35A

文件：1.75374 Mbytes 頁數(shù)：7 Pages

SHINDENGEN

絲?。?a target="_blank" title="Marking" href="/d35n06a/marking.html">D35N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 頁數(shù)：8 Pages

PANJIT

強(qiáng)茂

絲印：D35N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V,ID@20A

文件：446.11 Kbytes 頁數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/d35p03/marking.html">D35P03；Package：TO-252AA；30V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@-10V,ID@-8A

文件：446.13 Kbytes 頁數(shù)：8 Pages

PANJIT

強(qiáng)茂

絲印：D35NF06L；Package：DPAK；N-channel 60 V, 0.014 Ω, 35 A STripFET? II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

文件：650.7 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d35p06/marking.html">D35P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：441.52 Kbytes 頁數(shù)：5 Pages

KERSEMI

絲?。?a target="_blank" title="Marking" href="/d35p06/marking.html">D35P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：656.94 Kbytes 頁數(shù)：5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

Rectifier Diodes

\n優(yōu)勢:\n? 可靠性高，可以大幅度地減少維護(hù)并減少停機(jī)\n? 通過串聯(lián)和并聯(lián)的特殊設(shè)計，輕松實(shí)現(xiàn)系統(tǒng)功率調(diào)節(jié);

Infineon

英飛凌

Rectifier Diodes

\n優(yōu)勢:\n? 可靠性高，可以大幅度地減少維護(hù)并減少停機(jī)\n? 通過串聯(lián)和并聯(lián)的特殊設(shè)計，輕松實(shí)現(xiàn)系統(tǒng)功率調(diào)節(jié);

Infineon

英飛凌