METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICA

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SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICA

文件：20.25 Kbytes 頁數(shù)：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias circuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

Wide Operating Temperature Range: Intel

文件：292.22 Kbytes 頁數(shù)：2 Pages

AAEON

研揚科技

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes 頁數(shù)：1 Pages

HEYCO

Trench Field-Stop Technology IGBT

FEATURES · Low Saturation Voltage:VCE(sat)= 1.7V@IC= 30A · Easy Parallel Switching Capability Due to Positive · Pb-free Lead Plating, RoHS Compliant APPLICATIONS · Microwave Oven · ASoft Switching Applications for ZCS

文件：312.89 Kbytes 頁數(shù)：3 Pages

ISC

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