METAL GATE RF SILICON FET

文件：17.09 Kbytes 頁數(shù)：2 Pages

SEME-LAB

METAL GATE RF SILICON FET

文件：17.09 Kbytes 頁數(shù)：2 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias circuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? 110 mΩ @ VGS = 4.5V ? 145 mΩ @ VGS = 2.5V ? 230 mΩ @ VGS = 1.8V ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 1, 2 and 3) ? Qualified to AEC-Q101

文件：162.11 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導體

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? Low On-Resistance ? 110 mΩ @ VGS = 4.5V ? 145 mΩ @ VGS = 2.5V ? 230 mΩ @ VGS = 1.8V ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 1, 2 and 3) ? Qualified to AEC-Q101

文件：138.3 Kbytes 頁數(shù)：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? General Purpose Interfacing Switch ? Power Management Functions ? Boost Appli

文件：375.12 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體