Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias circuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：14.42 Kbytes 頁數(shù)：2 Pages

SEME-LAB

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? L

文件：141.67 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導體

P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance: ? Low Input Capacitance ? Fast Switching Spee

文件：252.63 Kbytes 頁數(shù)：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：520.159 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體