METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICATIONS from 1 MHz to 1 GH

文件：20.24 Kbytes 頁數(shù)：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics

HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER

文件：1.64769 Mbytes 頁數(shù)：36 Pages

RFMD

威訊聯(lián)合

HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER

文件：1.64769 Mbytes 頁數(shù)：36 Pages

RFMD

威訊聯(lián)合

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：579.24 Kbytes 頁數(shù)：10 Pages

DIODES

美臺半導(dǎo)體