METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1 MHz

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SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics

Low Input Capacitance

文件：264.43 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Backlighting Featur

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DIODES

美臺半導(dǎo)體

CONTENTS

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