Dual N-Channel Enhancement MOSFET

Nanxin

南芯微

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features ? Low ON-resistance. ? 2.5V drive. ? Mount height 1.1mm. ? Composite type, facilitating high-density mounting. ? Drain common specifications.

文件：57.39 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICATIONS from DC to 1 GHz

文件：39.58 Kbytes 頁數(shù)：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics

包裝：散裝 類別：工具 鉗子 描述：IRONWORKER'S REBAR PLIERS, LEFT

KLEIN

凱能