METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1MHz to 2

文件：58.87 Kbytes 頁數(shù)：4 Pages

SEME-LAB

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1MHz to 2

文件：58.87 Kbytes 頁數(shù)：4 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：220.14 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? 0.6mm Profile – Ideal for Low Profile Applications ? PCB Footprint of 4mm2 ? Low Gate Threshold Voltage ? ESD Protected Gate ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? The DMN2013UFDEQ is suitable for automotive

文件：532.33 Kbytes 頁數(shù)：8 Pages

DIODES

美臺半導(dǎo)體

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? 0.6mm Profile – Ideal for Low Profile Applications ? Low Gate Threshold Voltage ? ESD Protected Gate ? Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3

文件：614.8 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體