Si NPN TRANSISTOR

DESCRIPTION AND FEATURES 1. Collector-Emitter voltage: BVCBO= 60V 2. Collector current up to 3A 3. High hFElinearity

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ETCList of Unclassifed Manufacturers

未分類制造商

Audio Frequency Power Amplifier Applications

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TOSHIBA

東芝

METAL GATE RF SILICON FET

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SEME-LAB

絲印：D2012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ? Revolutionary semiconductor material - Silicon Carbide ? No reverse recovery current / no forward recovery ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Excellent thermal performance ?

文件：1.05054 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d2012c5/marking.html">D2012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ? No reverse recovery current / no forward recovery ? High surge current capability ? Temperature independent switching behaviour ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Specified dv/dt ruggedness ? Pb-free lead plating; RoHS

文件：1.07604 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

Power MOSFET

NIKO-SEM

尼克森

Power MOSFET

NIKO-SEM

尼克森