METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICATIONS from DC to 500 MHz

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SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics

Halogen and Antimony Free. ??reen??Device (Note 3)

文件：460.13 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導體

Rectifier Diode

FEATURES ■ Double Side Cooling ■ High Surge Capability APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers

文件：91.92 Kbytes 頁數(shù)：7 Pages

DYNEX

SURFACE MOUNT 10BASE-T INTERFACE MODULES

文件：554 Kbytes 頁數(shù)：4 Pages

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