METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

文件：60.51 Kbytes 頁數(shù)：4 Pages

SEME-LAB

10W音頻功率放大電路

D2003用于汽車收音機及收錄機中作音頻功率放大器。 \n D2003采用TO-220B封裝形式。 ·內(nèi)部具有短路保護和過熱保護。內(nèi)部具有地線開路、電源極性接反和負(fù)載泄放電壓反沖等保護電路\n·輸出電流大\n·負(fù)載電阻可低至1.6?\n·諧波失真小\n·交越失真小\n·外接元件少,體積小等;

Silicore

芯谷科技

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICATIONS from 50 MHz to 1 G

文件：60.51 Kbytes 頁數(shù)：4 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics