N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 7

文件：280.62 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

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N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 7

文件：280.62 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.088 Mbytes 頁數(shù)：9 Pages

VBSEMI

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N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 12

文件：255.95 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導體