Silicon NPN Power Transistors

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NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications ? High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) ? Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications ? High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) ? Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

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TOSHIBA

東芝

High-Power Switching Applications

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東芝

Silicon NPN Power Transistors

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絲?。?a target="_blank" title="Marking" href="/d1415b/marking.html">D1415B；Package：TO-220SIS；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ? High-Power Switching ? Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B

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TOSHIBA

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