METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6W – 7.2V – 500MHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? LOW Crss ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz

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SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

Leaded Power Chokes DMI

文件：197.58 Kbytes 頁(yè)數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Radial Coil Inductors

Features ? Wide inductance range ? Lowest DCR ? Tape packaging for auto-insertion ? Shrink tubing protected winding ? Fixed lead spacing ? High peak current support ? Large saturation current capacity ? Small footprint Applications ? TV and Audio equipment ? Telecommunication devices

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BEL

SmartSocket 16k/64k

DESCRIPTION The DS1213B SmartSocket is a 28-pin, 600 mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts either 24-pin 2K x 8 (lower-justified) or 28-pin 8K x 8 JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it prov

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DALLAS