METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMM

文件：15.39 Kbytes 頁數(shù)：2 Pages

SEME-LAB

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features ??SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). ??SC2: Systematic Capability SIL2. ??Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. ??NO/NC contact/proximity Detector Input. ??Four opto isolated volt

文件：307.06 Kbytes 頁數(shù)：2 Pages

GMI

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features ??SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). ??SC2: Systematic Capability SIL2. ??Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. ??NO/NC contact/proximity Detector Input. ??Four opto isolated volt

文件：307.06 Kbytes 頁數(shù)：2 Pages

GMI

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features ??SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). ??SC2: Systematic Capability SIL2. ??Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. ??NO/NC contact/proximity Detector Input. ??Four opto isolated volt

文件：307.06 Kbytes 頁數(shù)：2 Pages

GMI

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? VERY LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMM

文件：15.39 Kbytes 頁數(shù)：2 Pages

SEME-LAB

Full blocking capability 50/60Hz over a wide temperature range

文件：357.7 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Fast Hard Drive Diod e

文件：253.56 Kbytes 頁數(shù)：10 Pages

EUPEC

二極管盤

\n優(yōu)勢:\n? 用于 IGCT/Presspack IGBT 的飛輪或夾緊二極管\n? 可實現(xiàn)與 IGCT/Presspack IGBT 的低感應(yīng)連接\n? 低通態(tài)損耗下的極軟開關(guān)行為;

Infineon

英飛凌

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Very low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics

Fast Hard Drive Diod e

Infineon

英飛凌