METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 350W – 28V – 175MHz PUSH–PULL FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? LOW Crss ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? VHF/UHF COMMUNICATIONS from 1 MHz to 200 M

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SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 13 dB minimum;

TT Electronics

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen

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DIODES

美臺半導(dǎo)體

METAL GATE RF SILICON FET

文件：93.64 Kbytes 頁數(shù)：5 Pages

SEME-LAB

METAL GATE RF SILICON FET

文件：93.64 Kbytes 頁數(shù)：5 Pages

SEME-LAB