METAL GATE RF SILICON FET

FEATURES ? EXTRA LOW Crss ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz

文件：244.3 Kbytes 頁(yè)數(shù)：6 Pages

SEME-LAB

D COMPACT ENCLOSED SWITCH

Features ?High precision and long life. ?Suitable for applications demanding higher mechanical strength, ?Gasket diaphragm seal provides high environmental resistance.

文件：1.0947 Mbytes 頁(yè)數(shù)：4 Pages

HIGHLY

海立電氣

METAL GATE RF SILICON FET

FEATURES ? EXTRA LOW Crss ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? SIMPLE BIAS CIRCUITS ? LOW NOISE ? HIGH GAIN – 10 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz

文件：244.3 Kbytes 頁(yè)數(shù)：6 Pages

SEME-LAB

絲?。?a target="_blank" title="Marking" href="/d1020c5/marking.html">D1020C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC? Schottky diode 2000 V G5

Features ? VRRM = 2000 V ? IF = 10 A ? VF = 1.5 V ? No reverse recovery current / no forward recovery ? High surge current capability ? Temperature independent switching behavior ? Low forward voltage even at high operating temperature ? Tight forward voltage distribution ? Specified dv/d

文件：1.08255 Mbytes 頁(yè)數(shù)：10 Pages

INFINEON

英飛凌

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Extra low C(rss)\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics

Power MOSFET

NIKO-SEM

尼克森